Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …
Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
A Rosenberg, J Surya, R Liu, W Streyer, S Law… - Journal of Optics …, 2014 - osti.gov
We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …
Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
A Rosenberg, J Surya, R Liu, W Streyer… - Journal of …, 2014 - ui.adsabs.harvard.edu
We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …
[PDF][PDF] Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
A Rosenberg, J Surya, R Liu, W Streyer, S Law… - J. Opt, 2014 - researchgate.net
We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …
Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
A Rosenberg, J Surya, R Liu, W Streyer… - Journal of Optics …, 2014 - pure.psu.edu
We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …
Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
A Rosenberg, J Surya, R Liu, W Streyer… - Journal of Optics …, 2014 - experts.illinois.edu
We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …
Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors
A Rosenberg, J Surya, R Liu, W Streyer, S Law… - Journal of Optics …, 2014 - inis.iaea.org
[en] We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …
plasmonic applications. Using commercially available spin-dopants, we show that doped …