An Improvement of Analytical I–V Model for Surrounding-Gate MOSFETs

A Alkoash, RM Šašć, SM Ostojić… - … of Computational and …, 2011 - ingentaconnect.com
The paper presents a realistic and necessary improvement of the existing current–voltage
model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of …
被引用次数：4 相关文章

An Improvement of Analytical IV Model for Surrounding-Gate MOSFETs

AA Alkoash, R Šašić, SM Ostojić… - … of Computational and …, 2011 - technorep.tmf.bg.ac.rs
The paper presents a realistic and necessary improvement of the existing current-voltage
model for surrounding-gate MOSFETs. The basic model exploits the closed-form solution of …