Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short‐period superlattices

A Nakamura, Y Tokuda, T Nakayama, M Hirai - Applied physics letters, 1986 - pubs.aip.org
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAs/AlAs short …
被引用次数：33 相关文章
[PDF] archive.org

[PDF][PDF] Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices

K Fujiwara, A Nakamura, Y Tokuda, T Nakayama… - 1986 - scholar.archive.org
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAslAlAs short …

[引用][C] Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

K FUJIWARA, A NAKAMURA, Y TOKUDA… - Applied physics …, 1986 - pascal-francis.inist.fr
Improved recombination lifetime of photoexcited carriers in GaAs single quantum well
heterostructures confined by GaAs/AlAs short-period superlattices CNRS Inist Pascal-Francis CNRS …

Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices

K Fujiwara, A Nakamura, Y Tokuda, T Nakayama… - Applied Physics …, 1986 - cir.nii.ac.jp
抄録 Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from
6.1 nm GaAs single quantum well heterostructures (SQWH's) confined by GaAs/AlAs short …

improved recombination Ufetime of photoexcitec: l carriers hl GaAs single quantum wen heterostructures confined by GaAs/A~ As short-period superlattices

A Nakamura - ENERGY - pubs.aip.org
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum wen heterostructures (SQWH's) confined by GaAsl AlAs short …

Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices

K Fujiwara, A Nakamura, Y Tokuda… - Applied Physics …, 1986 - kyutech.repo.nii.ac.jp
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAslAlAs short …
[PDF] core.ac.uk

[PDF][PDF] Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

Y Tokuda - ENERGY - core.ac.uk
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAslAlAs short …

Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

K Fujiwara, A Nakamura, Y Tokuda… - Applied Physics …, 1986 - ui.adsabs.harvard.edu
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAs/AlAs short …

Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

K Fujiwara, A Nakamura, Y Tokuda, T Nakayama… - Applied Physics …, 1986 - cir.nii.ac.jp
抄録< jats: p> Photoluminescence (PL) decay time measurements at 77 and 300 K are
reported from 6.1 nm GaAs single quantum well heterostructures (SQWH's) confined by …

Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices

K Fujiwara, A Nakamura, Y Tokuda… - Applied Physics …, 1986 - kyutech.repo.nii.ac.jp
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1
nm GaAs single quantum well heterostructures (SQWH's) confined by GaAs/AlAs short …