Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …
[PDF][PDF] Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
SK Khamaria, P Mudia, S Porwala… - Journal of …, 2019 - academia.edu
GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al0. 22Ga0. 78As material over the excitation energy range of …
of spin polarized electrons in Al0. 22Ga0. 78As material over the excitation energy range of …
[引用][C] Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
SK Khamari, P Mudi, S Porwal… - Journal of …, 2019 - ui.adsabs.harvard.edu
Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through
polarization resolved photoluminescence excitation spectroscopy - NASA/ADS Now on home …
polarization resolved photoluminescence excitation spectroscopy - NASA/ADS Now on home …
[PDF][PDF] Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
SK Khamari, P Mudi, S Porwal, TK Sharma - researchgate.net
GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al 0.22Ga 0.78As material over the excitation energy range …
of spin polarized electrons in Al 0.22Ga 0.78As material over the excitation energy range …