Features of InGaAlAs/InP heterostructures

A Ramam, SJ Chua - Journal of Vacuum Science & Technology B …, 1998 - pubs.aip.org
InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8–1.42 eV. The I–V/C–V characteristics of the …
被引用次数：5 相关文章

Features of InGaAlAs/InP heterostructures

A Ramam, SJ Chua - Journal of Vacuum Science & Technology B …, 1998 - pubs.aip.org
InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8–1.42 eV. The I–V/C–V characteristics of the …

Features of InGaAlAs/InP heterostructures

A Ramam, SJ Chua - 1998 - scholarbank.nus.edu.sg
InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8-1.42 eV. The IV/CV characteristics of the …

[引用][C] Features of InGaAlAs/InP heterostructures

A Ramam, SJ Chua - Journal of Vacuum Science …, 1998 - ui.adsabs.harvard.edu
Features of InGaAlAs/InP heterostructures - NASA/ADS Now on home page ads icon ads
Enable full ADS view NASA/ADS Features of InGaAlAs/InP heterostructures Ramam, A. ; …

Features of InGaAlAs/InP heterostructures

A Ramam, SJ Chua - 1998 - scholarbank.nus.edu.sg
InGaAlAs epilayers lattice matched to an InP substrate are grown by molecular beam epitaxy
with band gap energies varying in the range 0.8-1.42 eV. The IV/CV characteristics of the …