Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si (111)

L Zhang, X Geng, G Zha, J Xu, S Wei, B Ma… - Materials Science in …, 2016 - Elsevier
Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-
pretreated Si (111) substrates under different As 4/Ga flux ratios (V/III ratios). It has been …
被引用次数：12 相关文章

Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si (111)

L Zhang, X Geng, G Zha, J Xu, S Wei, B Ma… - Materials Science in …, 2016 - infona.pl
Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-
pretreated Si (111) substrates under different As4/Ga flux ratios (V/III ratios). It has been …