Study of growth temperature in gas‐source molecular‐beam epitaxy growth of InGaAs/GaAs quantum well lasers

G Zhang, A Ovtchinnikov, M Pessa - Applied physics letters, 1993 - pubs.aip.org
Strained‐layer InGaAs/GaAs single quantum well lasers were grown by gas‐source
molecular‐beam epitaxy at temperatures between 430 and 610° C. The optimum growth …
被引用次数：6 相关文章

[引用][C] Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs quantum well lasers

G ZHANG, A OVTCHINNIKOV… - Applied physics …, 1993 - pascal-francis.inist.fr
Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs
quantum well lasers CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

[引用][C] Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs guantum well lasers

G Zhang, A Ovtchinnikov, M Pessa - Applied Physics Letters, 1993 - researchportal.tuni.fi
Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs
guantum well lasers — Tampere University Research Portal Skip to main navigation Skip to …

Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs quantum well lasers

G Zhang, A Ovtchinnikov, M Pessa - Applied Physics Letters, 1993 - ui.adsabs.harvard.edu
Abstract Strained-layer InGaAs/GaAs single quantum well lasers were grown by gas-source
molecular-beam epitaxy at temperatures between 430 and 610 C. The optimum growth …

Study of growth temperature in gas‐source molecular‐beam epitaxy growth of InGaAs/GaAs quantum well lasers

G Zhang, A Ovtchinnikov, M Pessa - Applied Physics Letters, 1993 - pubs.aip.org
Strained-layer InGaAs/GaAs single quantum well lasers were grown by gas-source
molecular-beam epitaxy at temperatures between 430 and 610 C. The optimum growth …