Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
V Sundaramoorthy, RA Minamisawa… - Materials Science …, 2018 - Trans Tech Publ
The formation of Ohmic contacts to n-type 4H-SiC layers at low annealing temperature using
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …
[PDF][PDF] Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
VK Sundaramoorthy, RA Minamisawa, L Kranz, L Knoll… - 2018 - researchgate.net
The formation of Ohmic contacts to n-type 4H-SiC layers at low annealing temperature using
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …
Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
VK Sundaramoorthy, RA Minamisawa… - Materials Science …, 2018 - search.proquest.com
The formation of Ohmic contacts to n-type 4H-SiC layers at low annealing temperature using
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …