Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping
ZR Lv, ZK Zhang, XG Yang, T Yang - Applied Physics Letters, 2018 - pubs.aip.org
We demonstrate significantly enhanced performances of 1.3-μm InAs/GaAs quantum dot
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …
Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping
ZR Lv, ZK Zhang, XG Yang, T Yang - Applied Physics Letters, 2018 - pubs.aip.org
We demonstrate significantly enhanced performances of 1.3-lm InAs/GaAs quantum dot
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …
Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping
ZR Lv, ZK Zhang, XG Yang… - Applied Physics Letters, 2018 - ui.adsabs.harvard.edu
We demonstrate significantly enhanced performances of 1.3-μm InAs/GaAs quantum dot
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …
(QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy …