Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

B Ismail, S Zghal, F Hassen - Microelectronics journal, 2003 - Elsevier
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
被引用次数：44 相关文章

[引用][C] Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L Beji, L Sfaxi, B Ismail, S Zghal, F Hassen… - Microelectronics …, 2003 - cir.nii.ac.jp
Morphology and photoluminescence studies of electrochemically etched heavily doped p-type
GaAs in HF solution | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細 …

Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L Beji, L Sfaxi, B Ismail, S Zghal, F Hassen… - Microelectronics …, 2003 - infona.pl
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
[PDF] academia.edu

[PDF][PDF] Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L Bejia, L Sfaxib, B Ismailb, S Zghalc… - Microelectronics …, 2003 - academia.edu
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

[引用][C] Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L BEJI, L SFAXI, B ISMAIL, S ZGHAL… - Microelectronics …, 2003 - pascal-francis.inist.fr
Morphology and photoluminescence studies of electrochemically etched heavily doped p-type
GaAs in HF solution CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L Beji, L Sfaxi, B Ismail, S Zghal, F Hassen… - Microelectronics …, 2003 - ksascholar.dri.sa
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
[PDF] academia.edu

[PDF][PDF] Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L Bejia, L Sfaxib, B Ismailb, S Zghalc… - Microelectronics …, 2003 - academia.edu
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …

[引用][C] Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution

L BEJI, L SFAXI, B ISMAIL, S ZGHAL, F HASSEN… - Microelectronics …, 2003 - Elsevier