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Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

R Rentzsch, KJ Friedland, AN Ionov… - … status solidi (b), 1986 - Wiley Online Library
First investigations are reported on the temperature dependence of the dc‐conductivity at
T== 0.05 to 300 K on neutron‐transmutation‐doped (NTD) n‐GaAs in the vicinity of the …
被引用次数：38 相关文章

[引用][C] Variable-range hopping in neutron-transmutation-doped gallium arsenide

R RENTZSCH, KJ FRIEDLAND… - Physica status solidi …, 1986 - pascal-francis.inist.fr
Variable-range hopping in neutron-transmutation-doped gallium arsenide CNRS Inist
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search Advanced …

[引用][C] Variable-Range Hopping in Neutron-Transmutation-Doped Gallium Arsenide

R Rentzsch, KJ Friedland, AN Ionov… - … Status Solidi B …, 1986 - ui.adsabs.harvard.edu
Variable-Range Hopping in Neutron-Transmutation-Doped Gallium Arsenide - NASA/ADS
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Variable-range hopping in neutron-transmutation-doped gallium arsenide

R Rentzsch, KJ Friedland, AN Ionov… - Physica Status Solidi …, 1986 - inis.iaea.org
[en] First investigations are reported on the temperature dependence of the dc-conductivity
at T= 0.05 to 300 K on neutron-transmutation-doped (NTD) n-GaAs in the vicinity of the metal …

[引用][C] Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

R Rentzsch, KJ Friedland, AN Ionov… - Physica Status Solidi (B …, 1986 - elibrary.ru

Variable-range hopping in neutron-transmutation-doped gallium arsenide

R Rentzsch, KJ Friedland, AN Ionov… - Phys. Status Solidi B; …, 1986 - osti.gov
First investigations are reported on the temperature dependence of the dc-conductivity at T=
0.05 to 300 K on neutron-transmutation-doped (NTD) n-GaAs in the vicinity of the metal …

[引用][C] Variable-range hopping in neutron-transmutation-doped gallium arsenide

R RENTZSCH, KJ FRIEDLAND, AN IONOV… - Physica status solidi. B …, 1986 - Wiley-VCH