Temperature dependence of photoluminescence of n‐InGaAsP

H Temkin, VG Keramidas, MA Pollack… - Journal of applied …, 1981 - pubs.aip.org
The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence
(PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …
被引用次数：56 相关文章

Temperature dependence of photoluminescence of n-InGaAsP

H Temkin, VG Keramidas, MA Pollack… - Journal of Applied …, 1981 - ui.adsabs.harvard.edu
The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence
(PL) of n-type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …

[引用][C] Temperature dependence of photoluminescence of n‐InGaAsP

H Temkin, VG Keramidas, MA Pollack… - Journal of Applied …, 1981 - cir.nii.ac.jp
Temperature dependence of photoluminescence of n‐InGaAsP | CiNii Research CiNii 国立
情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす …

Temperature dependence of photoluminescence of n‐InGaAsP

H Temkin, VG Keramidas, MA Pollack… - Journal of Applied …, 1981 - pubs.aip.org
Current interest in the InGaAsP alloy system has been generated by its usefulness in optical
communications. In particular, light emitting diodes (LED's) operating near the zero …

[引用][C] TEMPERATURE DEPENDENCE OF PHOTOLUMINISCENCE OF N-INGAASP

H TEMKIN, P MA, W WR - 1981 - pascal-francis.inist.fr
TEMPERATURE DEPENDENCE OF PHOTOLUMINISCENCE OF N-INGAASP CNRS Inist
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