Mid-infrared designer metals
S Law, DC Adams, AM Taylor, D Wasserman - Optics express, 2012 - opg.optica.org
We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
Mid-infrared designer metals
S Law, DC Adams, AM Taylor, D Wasserman - Optics Express, 2012 - experts.illinois.edu
We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
Mid-infrared designer metals.
S Law, DC Adams, AM Taylor, D Wasserman - Optics Express, 2012 - europepmc.org
We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
[引用][C] Mid-infrared designer metals
S Law, DC Adams, AM Taylor… - Optics …, 2012 - ui.adsabs.harvard.edu
Mid-infrared designer metals
S Law, DC Adams, AM Taylor… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
Mid-infrared designer metals
S Law, DC Adams, AM Taylor… - 25th IEEE Photonics …, 2012 - pure.psu.edu
We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
Mid-infrared designer metals
S Law, DC Adams, AM Taylor, D Wasserman - IEEE Photonics Conference 2012 - infona.pl
We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
Mid-infrared designer metals
S Law, DC Adams, AM Taylor… - Optics …, 2012 - pubmed.ncbi.nlm.nih.gov
We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
Mid-infrared designer metals
S Law, DC Adams, AM Taylor… - 25th IEEE Photonics …, 2012 - experts.illinois.edu
We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro …
Mid-infrared designer metals
S Law, DC Adams, AM Taylor, D Wasserman - Optics Express, 2012 - pure.psu.edu
We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …