[HTML][HTML] Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
Securing a semiconducting bandgap is essential for applying graphene layers in switching
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
[HTML][HTML] Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim… - Scientific …, 2016 - ncbi.nlm.nih.gov
Securing a semiconducting bandgap is essential for applying graphene layers in switching
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim… - Scientific …, 2016 - pubmed.ncbi.nlm.nih.gov
Securing a semiconducting bandgap is essential for applying graphene layers in switching
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim, M Lee… - Scientific Reports, 2016 - cir.nii.ac.jp
抄録< jats: title> Abstract</jats: title>< jats: p> Securing a semiconducting bandgap is
essential for applying graphene layers in switching devices. Theoretical studies have …
essential for applying graphene layers in switching devices. Theoretical studies have …
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, H Jeongwoon, JK Yoon, S Lim, S Kim, M Lee… - 2016 - nist.gov
Securing a stable bandgap is an essential requirement for applications of graphene layers
in switching devices. Theoretical studies have suggested creating a bulk bandgap and …
in switching devices. Theoretical studies have suggested creating a bulk bandgap and …
[PDF][PDF] Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim, M Lee… - tsapps.nist.gov
Since its first successful isolation, graphene has been considered as a material suitable for
future application in signal-switching devices with spin-sensitive transport 1. However, the …
future application in signal-switching devices with spin-sensitive transport 1. However, the …
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.
B Hwang, J Hwang, JK Yoon, S Lim, S Kim, M Lee… - Scientific …, 2016 - europepmc.org
Securing a semiconducting bandgap is essential for applying graphene layers in switching
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
[PDF][PDF] Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim, M Lee… - researchgate.net
Results Growth of Graphene on h-BN. We produced a graphene layer on an h-BN ML grown
on a Cu (111) substrate. After growing approximately half of the h-BN ML on a Cu (111) …
on a Cu (111) substrate. After growing approximately half of the h-BN ML on a Cu (111) …
[PDF][PDF] Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim, M Lee… - cyberleninka.org
Results Growth of Graphene on h-BN. We produced a graphene layer on an h-BN ML grown
on a Cu (111) substrate. After growing approximately half of the h-BN ML on a Cu (111) …
on a Cu (111) substrate. After growing approximately half of the h-BN ML on a Cu (111) …
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
B Hwang, J Hwang, JK Yoon, S Lim, S Kim… - Scientific …, 2016 - ui.adsabs.harvard.edu
Securing a semiconducting bandgap is essential for applying graphene layers in switching
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …
devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by …