An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

W Bian, J He, Y Tao, M Fang… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in
the paper. The model is obtained from rigorously solving Poisson equation together with the …
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An Analytic Potential-Based Model for Undoped Nanoscale Surrounding-Gate MOSFETs

W Bian, J He, Y Tao, M Fang, J Feng - IEEE Transactions on Electron …, 2007 - infona.pl
An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in
the paper. The model is obtained from rigorously solving Poisson equation together with the …

[引用][C] An Analytic Potential-Based Model for Undoped Nanoscale Surrounding-Gate MOSFETs

W Bian, J He, Y Tao, M Fang, J Feng - IEEE Transactions on Electron …, 2007 - cir.nii.ac.jp
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[引用][C] An Analytic Potential-Based Model for Undoped Nanoscale Surrounding-Gate MOSFETs

W Bian, J He, Y Tao, M Fang… - IEEE Transactions on …, 2007 - ui.adsabs.harvard.edu
An Analytic Potential-Based Model for Undoped Nanoscale Surrounding-Gate MOSFETs -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS An Analytic …

[引用][C] An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs: Simulation and modeling of nanoelectronics devices

WEI BIAN, JIN HE, Y TAO, MIN FANG… - IEEE transactions on …, 2007 - pascal-francis.inist.fr
An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs :
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An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

W Bian, J He, Y Tao, M Fang… - 2008 2nd IEEE …, 2008 - ieeexplore.ieee.org
An analytic potential-based model for the mndoped surrounding-gate MOSFETs is derived
in the paper. The model is obtained from solving Poisson equation rigorously together with …

An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

W Bian, J He, Y Tao, M Fang, J Feng - 2008 2nd IEEE International … - infona.pl
An analytic potential-based model for the undoped surrounding-gate MOSFETs is derived in
the paper. The model is obtained from solving Poisson equation rigorously together with the …