Limit of efficiency of generation of hot electrons in metals and their injection inside a semiconductor using a semiclassical approach

AY Petrov - ACS photonics, 2018 - ACS Publications
Hot electron generation in a metal and injection into a semiconductor is a crucial mechanism
to convert sub band gap photons into free electrical charges inside a semiconductor. This …
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[引用][C] Limit of efficiency of generation of hot electrons in metals and their injection inside a semiconductor using a semiclassical approach

E Blandre, D Jalas, AY Petrov, M Eich - ACS Photonics, 2018 - elibrary.ru
Limit of efficiency of generation of hot electrons in metals and their injection inside a
semiconductor using a semiclassical approach КОРЗИНА ПОИСК НАВИГАТОР ЖУРНАЛЫ …

Limit of efficiency of generation of hot electrons in metals and their injection inside a semiconductor using a semiclassical approach

E Blandre, D Jalas, A Petrov, M Eich - ACS photonics, 2018 - tore.tuhh.de
Limit of efficiency of generation of hot electrons in metals and their injection inside a
semiconductor using a semiclassical approach TUHH Open Research Hilfe Log In Email …

Limit of efficiency of generation of hot electrons in metals and their injection inside a semiconductor using a semiclassical approach

E Blandre, D Jalas, A Petrov, M Eich - ACS photonics, 2018 - tore.tuhh.de
Hot electron generation in a metal and injection into a semiconductor is a crucial mechanism
to convert sub band gap photons into free electrical charges inside a semiconductor. This …