Direct Growth of MoS2/h-BN Heterostructures via a Sulfide-Resistant Alloy

L Fu, Y Sun, N Wu, RG Mendes, L Chen, Z Xu… - Acs Nano, 2016 - ACS Publications
Improved properties arise in transition metal dichalcogenide (TMDC) materials when they
are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable …

Direct Growth of MoS₂/h-BN Heterostructures via a Sulfide-Resistant Alloy

L Fu, Y Sun, N Wu, RG Mendes, L Chen, Z Xu… - ACS …, 2016 - pubmed.ncbi.nlm.nih.gov
Improved properties arise in transition metal dichalcogenide (TMDC) materials when they
are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable …

Direct Growth of MoS₂/h-BN Heterostructures via a Sulfide-Resistant Alloy

L Fu, Y Sun, N Wu, RG Mendes, L Chen, Z Xu, T Zhang… - ACS Nano, 2016 - hero.epa.gov
Improved properties arise in transition metal dichalcogenide (TMDC) materials when they
are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable …

[引用][C] Direct Growth of MoS2/h-BN Heterostructures via a Sulfide-Resistant Alloy

L Fu, Y Sun, N Wu, RG Mendes, L Chen, Z Xu, T Zhang… - ACS Nano, 2016 - cir.nii.ac.jp
Direct Growth of MoS<sub>2</sub>/h-BN Heterostructures <i>via</i> a Sulfide-Resistant Alloy |
CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …

Direct Growth of MoS₂/h-BN Heterostructures via a Sulfide-Resistant Alloy.

L Fu, Y Sun, N Wu, RG Mendes, L Chen, Z Xu, T Zhang… - ACS Nano, 2016 - europepmc.org
Improved properties arise in transition metal dichalcogenide (TMDC) materials when they
are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable …

Direct Growth of MoS2/h-BN Heterostructures via a Sulfide-Resistant Alloy

L Fu, Y Sun, N Wu, RG Mendes, L Chen, Z Xu, T Zhang… - pstorage-acs-6854636.s3 …
Figure S2.(ab) A Photograph (a) and OM image (b) of h-BN film transferred onto a 90-nm
SiO2/Si substrate.(c) AFM image of h-BN film transferred onto a 90-nm SiO2/Si substrate.(d) …