Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned …
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned …
Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
MS Oh, W Choi, K Lee, DK Hwang… - Applied Physics …, 2008 - yonsei.elsevierpure.com
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al …
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al …
Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
MS Oh, W Choi, K Lee, DK Hwang… - Applied Physics …, 2008 - ui.adsabs.harvard.edu
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7V. Patterned Al …
type and p-type channels on a polyethersulfone substrate operating under 7V. Patterned Al …
Flexible high gain complementary inverter using n-ZnO and -pentacene channels on polyethersulfone substrate
MS Oh, W Choi, K Lee, DK Hwang - Applied Physics Letters, 2008 - elibrary.ru
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al …
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al …
Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
MS Oh, W Choi, K Lee, DK Hwang, S Im - Applied Physics Letters, 2008 - cir.nii.ac.jp
抄録< jats: p> We report on the fabrication of complementary inverters that have ZnO and
pentacene as n-type and p-type channels on a polyethersulfone substrate operating under …
pentacene as n-type and p-type channels on a polyethersulfone substrate operating under …
Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate
MS Oh, W Choi, K Lee, DK Hwang, S Im - Applied Physics Letters, 2008 - pubs.aip.org
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al …
type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al …