Mechanistic study of plasma damage of low k dielectric surfaces
Plasma damage to low k dielectric materials was investigated from a mechanistic point of
view. Low k dielectric films were treated by Ar, O 2, N 2, N 2∕ H 2, and H 2 plasmas in …
view. Low k dielectric films were treated by Ar, O 2, N 2, N 2∕ H 2, and H 2 plasmas in …
[PDF][PDF] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho, MD Goodner… - academia.edu
As silicon technology advances beyond the 45 nm node, ultralow k (ULK) dielectrics with
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
[PDF][PDF] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho, MD Goodner… - researchgate.net
As silicon technology advances beyond the 45 nm node, ultralow k (ULK) dielectrics with
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
[引用][C] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho… - Journal of Vacuum …, 2008 - ui.adsabs.harvard.edu
Mechanistic study of plasma damage of low k dielectric surfaces - NASA/ADS Now on home
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[PDF][PDF] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho, MD Goodner… - scholar.archive.org
As silicon technology advances beyond the 45 nm node, ultralow k (ULK) dielectrics with
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
[引用][C] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho… - Journal of Vacuum …, 2008 - cir.nii.ac.jp
[PDF][PDF] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho, MD Goodner… - Citeseer
As silicon technology advances beyond the 45 nm node, ultralow k (ULK) dielectrics with
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
Mechanistic study of plasma damage of low dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho… - Journal of Vacuum …, 2008 - pubs.aip.org
Plasma damage to low k dielectric materials was investigated from a mechanistic point of
view. Low k dielectric films were treated by Ar, O 2, N 2, N 2∕ H 2, and H 2 plasmas in a …
view. Low k dielectric films were treated by Ar, O 2, N 2, N 2∕ H 2, and H 2 plasmas in a …
[PDF][PDF] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho, MD Goodner… - scholar.archive.org
As silicon technology advances beyond the 45 nm node, ultralow k (ULK) dielectrics with
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
[PDF][PDF] Mechanistic study of plasma damage of low k dielectric surfaces
J Bao, H Shi, J Liu, H Huang, PS Ho, MD Goodner… - academia.edu
As silicon technology advances beyond the 45 nm node, ultralow k (ULK) dielectrics with
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …
porosity will be required for Cu interconnects. 1, 2 The mechanical and electrical properties …