4H-SiC Schottky barrier diodes using Mo-, Ti-and Ni-based contacts

D Perrone, M Naretto, S Ferrero, L Scaltrito… - Materials Science …, 2009 - Trans Tech Publ
We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …
被引用次数：25 相关文章

4H-SiC Schottky Barrier Diodes Using Mo-, Ti-and Ni-Based Contacts

D Perrone, M Naretto, S Ferrero, L Scaltrito… - Materials Science …, 2009 - cir.nii.ac.jp
抄録< jats: p> We have studied different Schottky and ohmic contacts on 4H-SiC with the aim
to obtain Schottky barrier diodes (SBDs) capable to operate at high temperatures …

[引用][C] 4H-SiC Schottky Barrier Diodes Using Mo-, Ti-and Ni-Based Contacts

D PERRONE, M NARETTO, S FERRERO… - Materials science …, 2009 - Trans Tech