M Mansueto, A Chavent, RC Sousa… - 2020 IEEE International …, 2020 - hal.science
The concept of a spintronic memristor based on angular variation of Tunnel Magnetoresistance relies on the development of an isotropically coercive free layer able to …
M Mansueto, LD Buda-Prejbeanu, A Chavent… - hal.science
The concept of a spintronic memristor based on angular variation of Tunnel Magnetoresistance relies on the development of an isotropically coercive free layer able to …
[引用][C]Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications