Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

M Mansueto, A Chavent, R Sousa… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
The concept of a spintronic memristor based on angular variation of Tunnel
Magnetoresistance relies on the development of an isotropically coercive free layer able to …

Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

M Mansueto, A Chavent, RC Sousa… - 2020 IEEE International …, 2020 - hal.science
The concept of a spintronic memristor based on angular variation of Tunnel
Magnetoresistance relies on the development of an isotropically coercive free layer able to …

[PDF][PDF] Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

M Mansueto, LD Buda-Prejbeanu, A Chavent… - hal.science
The concept of a spintronic memristor based on angular variation of Tunnel
Magnetoresistance relies on the development of an isotropically coercive free layer able to …

[引用][C] Isotropically coercive free layer integration in a magnetic tunnel junction for neuromorphic applications

M Mansueto, LD Buda-Prejbeanu, A Chavent…