Light emitting diode comprising semiconductor nanocrystal complexes
KO Cheon - US Patent 8,168,994, 2012 - Google Patents
US PATENT DOCUMENTS 6,057,561 A 5/2000 Kawasaki et al. 6,501,091 B1 12/2002
Bawendi et al. 6,734,465 B1 5, 2004 Taskar et al. 6,803,719 B1 10/2004 Miller et al …
Bawendi et al. 6,734,465 B1 5, 2004 Taskar et al. 6,803,719 B1 10/2004 Miller et al …
Light emitting diode comprising semiconductor nanocrystal complexes
KO Cheon - US Patent App. 11/485,334, 2007 - Google Patents
257/E33 (57) ABSTRACT A light emitting diode (LED) formed by depositing an LED chip
and coupling a stability layer to the LED chip. Semi conductor nanocrystals are placed in a …
and coupling a stability layer to the LED chip. Semi conductor nanocrystals are placed in a …
Light emitting diode comprising semiconductor nanocrystal complexes
K Cheon - US Patent 8,168,994, 2012 - freepatentsonline.com
A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer
to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a …
to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a …
Light emitting diode comprising semiconductor nanocrystal complexes
K Cheon - US Patent App. 11/485,334, 2007 - freepatentsonline.com
A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer
to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a …
to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a …