Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

F Capasso, HM Cox, AL Hutchinson, NA Olsson… - Applied physics …, 1984 - pubs.aip.org
We have demonstrated for the first time a pseudo‐quaternary GaInAsP semiconductor
consisting of a graded gap Ga0. 47In0. 53As/InP superlattice. The average composition and …
被引用次数：93 相关文章

[引用][C] Pseudo-quaternary GaInAsP semiconductors: a new Ga0. 47In0. 53As/InP graded gap superlattice and its applications to avalanche photodiodes

F CAPASSO, HM COX, AL HUTCHINSON… - Applied physics …, 1984 - pascal-francis.inist.fr
Pseudo-quaternary GaInAsP semiconductors: a new Ga0.47In0.53As/InP graded gap superlattice
and its applications to avalanche photodiodes CNRS Inist Pascal-Francis CNRS Pascal and …

Pseudo‐quaternary GaInAsP semiconductors: A new Ga0. 47In0. 53As/InP graded gap superlattice and its applications to avalanche photodiodes

F Capasso, HM Cox, AL Hutchinson, NA Olsson… - Applied Physics …, 1984 - pubs.aip.org
We have demonstrated for the first time a pseudo-quaternary GalnAsP semiconductor
consisting of a graded gap Gllo. 47 InO. 53 As/lnP superlattice. The average composition …

Pseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

F Capasso, AL Hutchinson, NA Olsson… - Applied Physics …, 1984 - ui.adsabs.harvard.edu
We have demonstrated for the first time a pseudo-quaternary GaInAsP semiconductor
consisting of a graded gap Ga 0.47 In 0.53 As/InP superlattice. The average composition …

[引用][C] Pseudo-quaternary GaInAsP semiconductors: a new Ga0. 47In0. 53As

F CAPASSO, HM COX… - Applied …, 1984 - American Institute of Physics