Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP Meier, E Van Gieson, W Walter, M Krahl… - Applied physics …, 1989 - pubs.aip.org
GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100)
substrates patterned with ridges and grooves in the [011̄] direction. Low‐temperature …

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP Meier, E Van Gieson, W Walter, C Harder… - Applied Physics …, 1989 - cir.nii.ac.jp
抄録< jats: p> GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy
on GaAs (100) substrates patterned with ridges and grooves in the [011̄] direction. Low …

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP Meier, E Van Gieson, W Walter… - Applied Physics …, 1989 - research.ibm.com
Abstract GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on
GaAs (100) substrates patterned with ridges and grooves in the [011̄] direction. Low …

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP Meier, E Van Gieson, W Walter, C Harder… - Appl. Phys. Lett.;(United …, 1989 - osti.gov
GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100)
substrates patterned with ridges and grooves in the (011-bar) direction. Low-temperature …

[引用][C] Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP MEIER, E VAN GIESON, W WALTER… - Applied physics …, 1989 - pascal-francis.inist.fr
Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates CNRS Inist
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search Advanced …

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP Meier, E Van Gieson, W Walter… - Applied Physics …, 1989 - ui.adsabs.harvard.edu
Abstract GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on
GaAs (100) substrates patterned with ridges and grooves in the [011] direction. Low …

Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

HP Meier, E Van Gieson, W Walter, C Harder… - Applied Physics …, 1989 - pubs.aip.org
GaAsl AIGaAs quantum wens (QWs) were grown by molecular beam epitaxy on GaAs (100)
substrates patterned with ridges and grooves in the [01 I1 direction. Low-temperature …

[引用][C] Molecular beam epitaxy of GaAs

HP MEIER, E VAN GIESON… - Applied …, 1989 - American Institute of Physics