Exploration of entire range of III–V semiconductors and their device applications

M Razeghi, YH Choi, X He, CJ Sun - Materials science and …, 1995 - Taylor & Francis
The most recent advances in III–V semiconductors, from wide band gap AlN to the new
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …
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Exploration of entire range of III–V semiconductors and their device applications

M Razeghi, YH Choi, X He… - Materials Science and …, 1995 - journals.sagepub.com
The most recent advances in III–V semiconductors, from wide band gap AlN to the new
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …

[引用][C] Exploration of entire range of III-V semiconductors and their device applications

M RAZEGHI, YH CHOI, X HE… - Materials science and …, 1995 - pascal-francis.inist.fr
Exploration of entire range of III-V semiconductors and their device applications CNRS Inist
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search Advanced …

[引用][C] Exploration of entire range of III-V semiconductors and their device applications

M Razeghi, YH Choi, X He… - Materials Science and …, 1995 - ui.adsabs.harvard.edu
Exploration of entire range of III-V semiconductors and their device applications - NASA/ADS
Now on home page ads icon ads Enable full ADS view NASA/ADS Exploration of entire range …

Exploration of entire range of III–V semiconductors and their device applications

M Razeghi, YH Choi, X He… - Materials Science and …, 1995 - scholars.northwestern.edu
The most recent advances in III–V semiconductors, from wide band gap AlN to the new
narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their …