Influence of Bi-related impurity states on the bandgap and spin–orbit splitting energy of dilute III–V-Bi alloys: InP1− xBix, InAs1− xBix, InSb1− xBix and GaSb1− xBix
DP Samajdar, S Dhar - Superlattices and Microstructures, 2016 - Elsevier
Abstract Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band
structure of Bi containing alloys such as InP 1− x Bi x, InAs 1− x Bi x, InSb 1− x Bi x and …
structure of Bi containing alloys such as InP 1− x Bi x, InAs 1− x Bi x, InSb 1− x Bi x and …
Influence of Bi-related impurity states on the bandgap and spin–orbit splitting energy of dilute III–V-Bi alloys: InP1− xBix, InAs1− xBix, InSb1− xBix and GaSb1− xBix
DP Samajdar, S Dhar - Superlattices and Microstructures, 2016 - infona.pl
Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band structure
of Bi containing alloys such as InP1− xBix, InAs1− xBix, InSb1− xBix and GaSb1− xBix due …
of Bi containing alloys such as InP1− xBix, InAs1− xBix, InSb1− xBix and GaSb1− xBix due …
Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix
DP Samajdar, S Dhar - Superlattices and Microstructures, 2016 - ui.adsabs.harvard.edu
Abstract Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band
structure of Bi containing alloys such as InP 1-x Bi x, InAs 1-x Bi x, InSb 1-x Bi x and GaSb 1 …
structure of Bi containing alloys such as InP 1-x Bi x, InAs 1-x Bi x, InSb 1-x Bi x and GaSb 1 …