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Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L Wang, S Guillemin, JM Chauveau… - … status solidi (c), 2016 - Wiley Online Library
Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …
被引用次数：12 相关文章

Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L Wang, S Guillemin, JM Chauveau… - … Status Solidi C …, 2016 - ui.adsabs.harvard.edu
Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi-layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …

[引用][C] Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L Wang, S Guillemin, JM Chauveau, V Sallet… - physica status solidi …, 2016 - hal.science
Characterization of carrier concentration in ZnO nanowires by scanning capacitance
microscopy - Archive ouverte HAL Accéder directement au contenu Documentation FR Français …