A SiGe terahertz heterodyne imaging transmitter with 3.3 mW radiated power and fully-integrated phase-locked loop

R Han, C Jiang, A Mostajeran, M Emadi… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology (f T/f max=
220/280 GHz) is reported. This transmitter consists of a 4× 4 array of radiators based on …
被引用次数：163 相关文章

[引用][C] A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

R Han, C Jiang, A Mostajeran… - IEEE Journal of …, 2015 - ui.adsabs.harvard.edu
A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated
Phase-Locked Loop - NASA/ADS Now on home page ads icon ads Enable full ADS view …

[引用][C] A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

R Han, C Jiang, A Mostajeran, M Emadi… - IEEE Journal of Solid …, 2015 - cir.nii.ac.jp
A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated
Phase-Locked Loop | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] …
[PDF] mit.edu

[PDF][PDF] A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

R Han, C Jiang, A Mostajeran, M Emadi… - IEEE JOURNAL OF …, 2015 - hangroup.mit.edu
SiGe BiCMOS technology ( 220/280 GHz) is reported. This transmitter consists of a 4× 4
array of radiators based on coupled harmonic oscillators. By incorporating a signal filter …

A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

R Han, C Jiang, A Mostajeran, M Emadi… - IEEE Journal of Solid …, 2015 - infona.pl
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ($ f_ {T}/f_
{\max}= $220/280 GHz) is reported. This transmitter consists of a 4× 4 array of radiators …

A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

R Han, C Jiang, A Mostajeran, M Emadi… - IEEE Journal of Solid …, 2015 - infona.pl
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ($ f_ {T}/f_
{\max}= $220/280 GHz) is reported. This transmitter consists of a 4× 4 array of radiators …