Computational study on the performance of multiple-gate nanowire Schottky-barrier MOSFETs

M Shin - IEEE transactions on electron devices, 2008 - ieeexplore.ieee.org
Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the
ballistic transport regime have been performed by self-consistently solving the …
被引用次数：33 相关文章

Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

M Shin - IEEE Transactions on Electron Devices, 2008 - infona.pl
Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the
ballistic transport regime have been performed by self-consistently solving the …

[引用][C] Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

M Shin - IEEE Transactions on Electron Devices, 2008 - ui.adsabs.harvard.edu
Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier
MOSFETs - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …

[引用][C] Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

M Shin - IEEE Transactions on Electron Devices, 2008 - cir.nii.ac.jp
Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier
MOSFETs | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 …

[引用][C] Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

M SHIN - IEEE transactions on electron devices, 2008 - pascal-francis.inist.fr
Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search …
[PDF] researchgate.net

[PDF][PDF] Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

M Shin - researchgate.net
[8],[9] Devices with low SB height, close to zero possibly, are also desirable for on-current
improvement. But, as the channel length is ultimately scaled down, less than 10 nm or so …

Computational study on the performance of multiple-gate nanowire schottky-barrier MOSFETs

M Shin - IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008 - koasas.kaist.ac.kr
Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the
ballistic transport regime have been performed by self-consistently solving the …

[引用][C] Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs

M SHIN - IEEE transactions on electron devices, 2008 - Institute of Electrical and Electronics …