1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu - Optics express, 2012 - opg.optica.org
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …
被引用次数：42 相关文章
[PDF] core.ac.uk

[PDF][PDF] 1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu - 2012 - core.ac.uk
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …
[PDF] researchgate.net

[PDF][PDF] 1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu - 2012 - researchgate.net
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan… - Optics …, 2012 - pubmed.ncbi.nlm.nih.gov
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JP David, CH Tan, T Wang, H Liu - Optics Express, 2012 - hero.epa.gov
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan… - Optics …, 2012 - eprints.whiterose.ac.uk
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

[引用][C] 1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon

I Sandall, JS Ng, JPR David, CH Tan… - Optics …, 2012 - ui.adsabs.harvard.edu
1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon - NASA/ADS Now on
home page ads icon ads Enable full ADS view NASA/ADS 1300 nm Wavelength InAs Quantum …
[PDF] academia.edu

[PDF][PDF] 1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu - 2012 - academia.edu
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …
[PDF] archive.org

[PDF][PDF] 1300 nm wavelength InAs quantum dot photodetector grown on silicon

I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu - 2012 - scholar.archive.org
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

I Sandall, JS Ng, JP David, CH Tan, T Wang, H Liu - Optics Express, 2012 - europepmc.org
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon
substrate have been investigated to evaluate their potential as both photodiodes and …