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Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

VS Kharlamov, BJ Ber, YV Trushin… - … in Science and …, 2001 - spiedigitallibrary.org
The combined experimental and computer simulation technique for the estimation of the
displacement threshold energies of impurity atoms in materials has been developed. The …
被引用次数：4 相关文章

Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

VS Kharlamov, BJ Ber, YV Trushin… - Society of Photo …, 2001 - ui.adsabs.harvard.edu
The combined experimental and computer simulation technique for the estimation of the
displacement threshold energies of impurity atoms in materials has been developed. The …

[引用][C] Estimation of the displacement threshold energies in Si and GaAs by means of the ion sputtering of structures with thin marker layers

VS Kharlamov, BJ Ber, YV Trushin, AP Kovarski… - Proceedings of SPIE …, 2001 - elibrary.ru

Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

VS Kharlamov, BJ Ber, YV Trushin… - … in Science and …, 2000 - ui.adsabs.harvard.edu
The combined experimental and computer simulation technique for the estimation of the
displacement threshold energies of impurity atoms in materials has been developed. The …

[引用][C] Estimation of the displacement threshold energies in Si and GaAs by means of the ion sputtering of structures with thin marker layers

VS KHARLAMOV, BJ BER… - … of SPIE, the …, 2001 - Society of Photo-Optical …