InGaAsP laser diodes

GH Olsen - Optical Engineering, 1981 - spiedigitallibrary.org
The advantages and properties of InGaAsP laser diodes in the 1.0 to 1. 7 um spectral region
are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating …
被引用次数：8 相关文章

InGaAsP laser diodes

GH Olsen - Optical Engineering, 1981 - spiedigitallibrary.org
The advantages and properties of InGaAsP laser diodes in the 1.0 to 1.7 µm spectral region
are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating …

InGaAsP Laser Diodes

GH Olsen - Optical Engineering, 1981 - ui.adsabs.harvard.edu
The advantages and properties of InGaAsP laser diodes in the 1.0 to 1. 7 um spectral region
are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating …

[引用][C] INGAASP LASER DIODES

GH OLSEN - 1981 - pascal-francis.inist.fr
INGAASP LASER DIODES CNRS Inist Pascal-Francis CNRS Pascal and Francis
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