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Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M Erdtmann, J Jiang, AW Matlis… - … and Devices V, 2000 - spiedigitallibrary.org
Multi-quantum well structures of Ga x In 1-x As y P 1-y were grown by metalorganic chemical
vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and …
被引用次数：7 相关文章

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M Erdtmann, J Jiang, A Matlis, A Tahraoui, C Jelen - spiedigitallibrary.org
Multi-quantum well structures of GaIn1AsP1 were grown by metalorganic chemical vapor
deposition for the fabrication of quantum well infrared photodetectors. The thickness and …

[引用][C] Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M ERDTMANN, J JIANG, A MATLIS… - SPIE proceedings …, 2000 - pascal-francis.inist.fr
Growth and optimization of GaInAsP/InP material system for quantum well infrared
photodetector applications CNRS Inist Pascal-Francis CNRS Pascal and Francis …

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M Erdtmann, J Jiang, A Matlis… - … of SPIE-The …, 2000 - scholars.northwestern.edu
Multi-quantum well structures of Ga x In 1-x AS y P 1-y were grown by metalorganic
chemical vapor deposition for the fabrication of quantum well infrared photodetectors. The …

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M Erdtmann, J Jiang, AW Matlis… - … and Devices V, 2000 - ui.adsabs.harvard.edu
Multi-quantum well structures of Ga x In 1-x As y P 1-y were grown by metalorganic chemical
vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and …

[引用][C] Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M ERDTMANN, J JIANG… - SPIE …, 2000 - Society of Photo-Optical …