Comparative performance evaluation of series connected 15 kV SiC IGBT devices and 15 kV SiC MOSFET devices for MV power conversion systems

K Vechalapu, A Negi… - 2016 IEEE Energy …, 2016 - ieeexplore.ieee.org
The 10-15kV SiC MOSFET and 15kV SiC IGBT (2 μm and 5 μm buffer layer) are the state of
the art high voltage devices designed by Cree Inc. These devices are expected to increase …
被引用次数：55 相关文章

Performance evaluation of series connected 15 kV SiC IGBT devices for MV power conversion systems

K Vechalapu, A Negi… - 2016 IEEE Energy …, 2016 - ieeexplore.ieee.org
The 15kV SiC IGBT (2 μm buffer layer) with chip area of 8.4× 8.4 mm 2 is the state of the art
high voltage device designed by Cree Inc. This device is expected to increase the power …

[引用][C] Performance evaluation of series connected 15 kV SiC IGBT devices for MV power conversion systems

K Vechalapu, A Negi, S Bhattacharya - 2016 IEEE Energy Conversion …, 2016 - cir.nii.ac.jp
Performance evaluation of series connected 15 kV SiC IGBT devices for MV power conversion
systems | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …