Novel Power Gated (PG) and Sleep Body Bias (SBB) 6T CNTFET-Based SRAM Design for Ultra-Low-Power Application

H Kumar, B Singh, S Srivastava, G Siddiqui… - VLSI, Microwave and …, 2022 - Springer
The leakage power consumption accounts for progressively huge portion of average power
consumption in nanometer regime. To limit the power dissipation, different low-power …
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Novel Power Gated (PG) and Sleep Body Bias (SBB) 6T CNTFET-Based SRAM Design for Ultra-Low-Power Application

H Kumar, B Singh, S Srivastava, G Siddiqui… - VLSI, Microwave and … - Springer
The leakage power consumption accounts for progressively huge portion of average power
consumption in nanometer regime. To limit the power dissipation, different low-power …