High‐power 630–640 nm GaInP/GaAlInP laser diodes

RJ Fu, CJ Hwang - Applied physics letters, 1992 - pubs.aip.org
High‐power visible laser diodes operating at 630–640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded‐index separate confinement …
被引用次数：20 相关文章

High‐power 630–640 nm GaInP/GaAlInP laser diodes

SS Ou, JJ Yang, RJ Fu, CJ Hwang - Applied Physics Letters, 1992 - pubs.aip.org
High-power visible laser diodes operating at 630-640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement …

[引用][C] High-power 630-640 nm GaInP/GaAlInP laser diodes

SS OU, JJ YANG, RJ FU, CJ HWANG - Applied physics letters, 1992 - pascal-francis.inist.fr
High-power 630-640 nm GaInP/GaAlInP laser diodes CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …

High-power 630-640 nm GaInP/GaAlInP laser diodes

SS Ou, JJ Yang, RJ Fu, CJ Hwang - Applied Physics Letters, 1992 - ui.adsabs.harvard.edu
High-power visible laser diodes operating at 630-640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement …

High-power 630-640nm GaInP/GaAlInP laser diodes

SS Ou, JJ Yang, M Jansen, RJ Fu… - Optoelectronic …, 1992 - spiedigitallibrary.org
High-power visible laser diodes operating at 630-640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement …

High-power 630-640nm GaInP/GaAlInP laser diodes

SS Ou, JJ Yang, M Jansen, RJ Fu… - Optoelectronic …, 1992 - ui.adsabs.harvard.edu
High-power visible laser diodes operating at 630-640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement …

High-power 630-640nm GaInP/GaAlInP laser diodes

S Ou, J Yang, M Jansen, R Fu, C Hwang - spiedigitallibrary.org
High-power visible laser diodes operating at 630-640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded—index separate confinement …

[引用][C] High-power 630-640 nm GaInP

SS OU, JJ YANG, RJ FU… - Applied physics …, 1992 - American Institute of Physics