Dielectric anomaly in Mg doped ZnO thin film deposited by Sol–Gel method
Magnesium doped ZnO polycrystalline thin film was deposited on p-type Si by sol–gel
method, and the same was annealed at in oxygen rich environment. The magnesium doping …
method, and the same was annealed at in oxygen rich environment. The magnesium doping …
[PDF][PDF] Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol–Gel Method
A Singh, D Kumar, PK Khanna, A Kumar… - Journal of The …, 2011 - researchgate.net
Magnesium doped ZnO (Zn0. 75Mg0. 25O) polycrystalline thin film was deposited on p-type
Si by sol–gel method, and the same was annealed at 1000 C in oxygen rich environment …
Si by sol–gel method, and the same was annealed at 1000 C in oxygen rich environment …
[引用][C] Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol–Gel Method
A Singh, D Kumar, PK Khanna, A Kumar… - Journal of The …, 2011 - cir.nii.ac.jp
[引用][C] Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol-Gel Method
AC Singh, PK Khanna, A Kumar, M Kumar… - ECS …, 2010 - ui.adsabs.harvard.edu
Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol-Gel Method - NASA/ADS
Now on home page ads icon ads Enable full ADS view NASA/ADS Dielectric Anomaly in Mg …
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Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol-Gel Method
AC Singh, PK Khanna, A Kumar, M Kumar… - ECS …, 2010 - iopscience.iop.org
The magnesium doped ZnO polycrystalline thin film (Zn0. 75Mg0. 25O) film was grown by
sol-gel method on p-type silicon substrate. The film was annealed at 1000 C in oxygen rich …
sol-gel method on p-type silicon substrate. The film was annealed at 1000 C in oxygen rich …