High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs

J Shimizu, T Ohashi, K Matsuura… - Japanese Journal of …, 2017 - iopscience.iop.org
We investigate the low-temperature formation of MoS 2 films by radio frequency (RF)
sputtering. This work is focused on reducing the number of sulfur defects and the improving …
被引用次数：22 相关文章

[引用][C] High-mobility and low-carrier-density sputtered MoS2film formed by introducing residual sulfur during low-temperature in 3%-H2annealing for three …

J Shimizu, T Ohashi, K Matsuura, I Muneta… - Japanese Journal of …, 2017 - cir.nii.ac.jp
High-mobility and low-carrier-density sputtered MoS2film formed by introducing residual sulfur
during low-temperature in 3%-H2annealing for three-dimensional ICs | CiNii Research CiNii …

High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional …

J Shimizu, T Ohashi, K Matsuura… - … Journal of Applied …, 2017 - ui.adsabs.harvard.edu
We investigate the low-temperature formation of MoS 2 films by radio frequency (RF)
sputtering. This work is focused on reducing the number of sulfur defects and the improving …