Ambipolar independent double gate FET (Am-IDGFET) for the design of compact logic structures

K Jabeur, I O'Connor, S Le Beux - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Among potential candidates to replace the CMOS transistor channel, several materials such
as CNTs, GNRs, and SiNW show an interesting behavior known as “Ambipolarity.” …
被引用次数：9 相关文章

Ambipolar Independent Double Gate FET (Am-IDGFET) for the Design of Compact Logic Structures

K Jabeur, I OConnor, S Le Beux - IEEE Transactions on Nanotechnology, 2014 - infona.pl
Among potential candidates to replace the CMOS transistor channel, several materials such
as CNTs, GNRs, and SiNW show an interesting behavior known as “Ambipolarity.” …

[引用][C] Ambipolar Independent Double Gate FET (Am-IDGFET) for the Design of Compact Logic Structures

K Jabeur, I OConnor, S Le Beux - IEEE Transactions on …, 2014 - ui.adsabs.harvard.edu
Ambipolar Independent Double Gate FET (Am-IDGFET) for the Design of Compact Logic
Structures - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …

[引用][C] Ambipolar Independent Double Gate FET (Am-IDGFET) for the Design of Compact Logic Structures

K Jabeur, I O'Connor, S Le Beux - IEEE Transactions on …, 2014 - hal.science
Ambipolar Independent Double Gate FET (Am-IDGFET) for the Design of Compact Logic
Structures - Archive ouverte HAL Accéder directement au contenu Documentation FR Français …