Development of a high-growth rate 3C-SiC on Si CVD process

M Reyes, S Harvey - MRS Online Proceedings Library (OPL), 2006 - cambridge.org
Growth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100)
substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth …
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Development of a high-growth rate 3C-SiC on Si CVD process

M Reyes, Y Shishkin, S Harvey, SE Saddow - cambridge.org
Growth rates from 10 to 38 µm/h were achieved for heteroepitaxial 3C-SiC on Si (100)
substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth …

Development of a high-growth rate 3C-SiC on Si CVD process

M Reyes, Y Shishkin, S Harvey, SE Saddow - MRS Proceedings, 2006 - cir.nii.ac.jp
抄録< jats: title> Abstract</jats: title>< jats: p> Growth rates from 10 to 38 μm/h were
achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane …

Development of a high-growth rate 3C-SiC on Si CVD process

M Reyes, Y Shishkin, S Harvey, SE Saddow - MRS Online Proceedings …, 2005 - Springer
Growth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100)
substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth …