Light emitting diodes for the spectral range λ= 3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20 …

M Aidaraliev, NV Zotova, SA Karandashev, BA Matveev… - Semiconductors, 2001 - Springer
Light-emitting diodes (LEDs) based on pn homo-and heterostructures with InAsSb (P) and
InGaAs active layers have been designed and studied. An emission power of 0.2 (λ= 4.3 µm) …
被引用次数：26 相关文章

[引用][C] Light Emitting Diodes for the Spectral Range lambda= 3.3-4.3 µm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the …

M Aidaraliev, NV Zotova, SA Karandashev… - …, 2001 - ui.adsabs.harvard.edu
Light Emitting Diodes for the Spectral Range lambda = 3.3-4.3 µm Fabricated from InGaAs and
InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180C (Part …

[引用][C] Light emitting diodes for the spectral range λ= 3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of …

M Aidaraliev, NV Zotova, SA Karandashev, BA Matveev… - Semiconductors, 2001 - Springer