Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Sakai, T Soga, M Takeyasu, M Umeno - Applied physics letters, 1986 - pubs.aip.org
AIGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …
被引用次数：118 相关文章
[PDF] nii.ac.jp

[PDF][PDF] Room-temperature laser operation of AIGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Sakai, T Soga, M Takeyasu, M Umeno - Appl. Phys. Lett, 1986 - nitech.repo.nii.ac.jp
AIGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …

Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Shiro, S Tetsuo, T Masanari - APPLIED PHYSICS LETTERS, 1986 - cir.nii.ac.jp
抄録 AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si
substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate …

[引用][C] Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S SAKAI, T SOGA, M TAKEYASU… - Applied physics …, 1986 - pascal-francis.inist.fr
Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on
Si substrates by metalorganic chemical vapor deposition CNRS Inist Pascal-Francis CNRS …

Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Sakai, T Soga, M Takeyasu, M Umeno - Appl. Phys. Lett.;(United States), 1986 - osti.gov
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …

[引用][C] Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Sakai, T Soga, M Takeyasu, M Umeno - Applied Physics Letters, 1986 - pubs.aip.org
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …

Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Sakai, T Soga, M Takeyasu… - Applied Physics …, 1986 - ui.adsabs.harvard.edu
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …
[PDF] nii.ac.jp

[PDF][PDF] Room-temperature laser operation of AIGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S Sakai, T Soga, M Takeyasu, M Umeno - Appl. Phys. Lett, 1986 - nitech.repo.nii.ac.jp
AIGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates
using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown …

[引用][C] Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

S SAKAI, T SOGA, M TAKEYASU… - Applied physics …, 1986 - American Institute of Physics