High quality InP and In1− xGaxAsyP1− y grown by gas source MBE
M Lambert, L Goldstein, A Perales, F Gaborit… - Journal of crystal …, 1991 - Elsevier
The growth of high quality InP and In 1− x Ga x As y P 1− y by gas source molecular beam
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …
[引用][C] High quality InP and In1− xGaxAsyP1− y grown by gas source MBE
M Lambert, L Goldstein, A Perales, F Gaborit… - Journal of Crystal …, 1991 - cir.nii.ac.jp
High quality InP and In1−xGaxAsyP1−y grown by gas source MBE | CiNii Research CiNii
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
High quality InP and In 1-xGa xAs yP 1-y grown by gas source MBE
M Lambert, L Goldstein, A Perales… - Journal of Crystal …, 1991 - ui.adsabs.harvard.edu
The growth of high quality InP and In 1-x Ga x As y P 1-y by gas source molecular beam
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …
epitaxy is reported. 77 K mobilities up to 112,000 cm 2/V⋯ s for high purity InP have been …
[引用][C] High quality InP and In1-xGaxAsyP1-y grown by gas source MBE
M LAMBERT, L GOLDSTEIN… - Journal of crystal …, 1991 - pascal-francis.inist.fr
High quality InP and In1-xGaxAsyP1-y grown by gas source MBE CNRS Inist Pascal-Francis
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
CNRS Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …