Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

M Boutchich, T Teraji, Y Koide - Journal of Physics D: Applied …, 2014 - iopscience.iop.org
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy and confocal …
被引用次数：15 相关文章
[PDF] researchgate.net

[PDF][PDF] Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider, T Teraji… - J. Phys. D: Appl …, 2014 - researchgate.net
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy and confocal …

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider… - Journal of Physics …, 2014 - centralesupelec.hal.science
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) …

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider… - Journal of Physics D …, 2014 - hal.insa-toulouse.fr
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) …

[引用][C] Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider, T Teraji… - Journal of Physics D …, 2014 - cir.nii.ac.jp
Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by
conductive-probe atomic force microscopy and Raman imaging | CiNii Research CiNii 国立 …
[PDF] academia.edu

[PDF][PDF] Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider, T Teraji… - J. Phys. D: Appl …, 2014 - academia.edu
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy and confocal …

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider, T Teraji… - arXiv preprint arXiv …, 2014 - arxiv.org
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) …

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider… - Journal of Physics D …, 2014 - hal.univ-reunion.fr
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) …

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider, T Teraji… - Journal of Physics. D …, 2014 - inis.iaea.org
[en] The origin of the high leakage current measured in several vertical-type diamond
Schottky devices is conjointly investigated by conducting probe atomic force microscopy and …

Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging

J Alvarez, M Boutchich, JP Kleider… - Journal of Physics D …, 2014 - cnrs.hal.science
The origin of the high leakage current measured in several vertical-type diamond Schottky
devices is conjointly investigated by conducting probe atomic force microscopy (CP-AFM) …