Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

A Hamzah, FA Hamid, R Ismail - Semiconductor Science and …, 2016 - iopscience.iop.org
An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from
intrinsic to heavily doped body including the effects of interface traps and fixed oxide …
被引用次数：8 相关文章

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

A Hamzah, FA Hamid, R Ismail - Semiconductor Science …, 2016 - ui.adsabs.harvard.edu
An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from
intrinsic to heavily doped body including the effects of interface traps and fixed oxide …
[PDF] researchgate.net

[PDF][PDF] Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

A Hamzah, FA Hamid, R Ismail - Semicond. Sci. Technol, 2016 - researchgate.net
An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from
intrinsic to heavily doped body including the effects of interface traps and fixed oxide …

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

A Hamzah, FA Hamid, R Ismail - Semiconductor Science and …, 2016 - inis.iaea.org
[en] An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented
from intrinsic to heavily doped body including the effects of interface traps and fixed oxide …