Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

P Cinguino, F Genova, C Rigo, C Cacciatore… - Applied physics …, 1987 - pubs.aip.org
The monolithic integration of a low loss InGaAlAs ridge waveguide with a low leakage
InGaAs photodiode is demonstrated. The structure has been grown by molecular beam …
被引用次数：34 相关文章

[引用][C] Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

P CINGUINO, F GENOVA, C RIGO… - Applied physics …, 1987 - pascal-francis.inist.fr
Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation
grown by molecular beam epitaxy CNRS Inist Pascal-Francis CNRS Pascal and Francis …

Monolithic integrated InGaAIAsllnP ridge waveguide photodiodes for 1.55 tJ-m operation grown by moiecular beam epitaxy

P Onguino, F Genova, C Rigo, C Cacciatore, A Stano - Appl. Phys. Lett, 1987 - pubs.aip.org
The monolithic integration of a low loss InGaAIAs ridge waveguide with a low leakage
InGaAs photodiode is demonstrated. The structure has been grown by molecular beam …

Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 µm operation grown by molecular beam epitaxy

P Cinguino, F Genova, C Rigo… - Applied Physics …, 1987 - ui.adsabs.harvard.edu
The monolithic integration of a low loss InGaAlAs ridge waveguide with a low leakage
InGaAs photodiode is demonstrated. The structure has been grown by molecular beam …

[引用][C] Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

P CINGUINO, F GENOVA, C RIGO… - Applied physics …, 1987 - pascal-francis.inist.fr
Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation
grown by molecular beam epitaxy CNRS Inist Pascal-Francis CNRS Pascal and Francis …

[引用][C] Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

P CINGUINO, F GENOVA, C RIGO… - Applied …, 1987 - American Institute of Physics

[引用][C] Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

P CINGUINO, F GENOVA, C RIGO… - Applied …, 1987 - American Institute of Physics