Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS 2 thin film
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic
devices because of their characteristic band structure. Here, we demonstrated that the …
devices because of their characteristic band structure. Here, we demonstrated that the …
Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.
Y Tsuboi, F Wang, D Kozawa, K Funahashi, S Mouri… - Nanoscale, 2015 - europepmc.org
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic
devices because of their characteristic band structure. Here, we demonstrated that the …
devices because of their characteristic band structure. Here, we demonstrated that the …
Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film
Y Tsuboi, F Wang, D Kozawa, K Funahashi… - …, 2015 - waseda.elsevierpure.com
抄録 Transition-metal dichalcogenides exhibit great potential as active materials in
optoelectronic devices because of their characteristic band structure. Here, we …
optoelectronic devices because of their characteristic band structure. Here, we …
[引用][C] Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2thin film
Y Tsuboi, F Wang, D Kozawa, K Funahashi, S Mouri… - Nanoscale, 2015 - cir.nii.ac.jp
Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<sub>2</sub>thin
film | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …
film | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …
Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film
Y Tsuboi, F Wang, D Kozawa, K Funahashi… - arXiv preprint arXiv …, 2015 - arxiv.org
Atomically thin layered materials such as graphene and transition-metal dichalcogenides
exhibit great potential as active materials in optoelectronic devices because of their high …
exhibit great potential as active materials in optoelectronic devices because of their high …
Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film
Y Tsuboi, F Wang, D Kozawa, K Funahashi… - …, 2015 - pubmed.ncbi.nlm.nih.gov
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic
devices because of their characteristic band structure. Here, we demonstrated that the …
devices because of their characteristic band structure. Here, we demonstrated that the …
Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film
Y Tsuboi, F Wang, D Kozawa, K Funahashi… - …, 2015 - ui.adsabs.harvard.edu
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic
devices because of their characteristic band structure. Here, we demonstrated that the …
devices because of their characteristic band structure. Here, we demonstrated that the …
[PDF][PDF] Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film
Y Tsuboi, F Wang, D Kozawa, K Funahashi, S Mouri… - Nanoscale, 2015 - researchgate.net
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic
devices because of their characteristic band structure. Here, we demonstrated that the …
devices because of their characteristic band structure. Here, we demonstrated that the …
[PDF][PDF] Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film
Y Tsuboi, F Wang, D Kozawa, K Funahashi, S Mouri… - researchgate.net
Atomically thin layered materials such as graphene and transition-metal dichalcogenides
exhibit great potential as active materials in optoelectronic devices because of their high …
exhibit great potential as active materials in optoelectronic devices because of their high …
Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS2 thin film
Y Tsuboi, F Wang, D Kozawa, K Funahashi… - …, 2015 - waseda.elsevierpure.com
Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic
devices because of their characteristic band structure. Here, we demonstrated that the …
devices because of their characteristic band structure. Here, we demonstrated that the …