Noninvasive spatial metrology of single-atom devices
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly scaled transistors or spin-based devices. We …
determine the functionality of highly scaled transistors or spin-based devices. We …
[引用][C] Noninvasive Spatial Metrology of Single-Atom Devices
FA MOHIYADDIN, R RAHMAN, R KALRA… - Nano letters …, 2013 - pascal-francis.inist.fr
Noninvasive Spatial Metrology of Single-Atom Devices CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …
[引用][C] Noninvasive Spatial Metrology of Single-Atom Devices
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck… - Nano …, 2013 - ui.adsabs.harvard.edu
Noninvasive Spatial Metrology of Single-Atom Devices - NASA/ADS Now on home page
ads icon ads Enable full ADS view NASA/ADS Noninvasive Spatial Metrology of Single-Atom …
ads icon ads Enable full ADS view NASA/ADS Noninvasive Spatial Metrology of Single-Atom …
[PDF][PDF] Non-invasive spatial metrology of single-atom devices
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck… - academia.edu
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly-scaled transistors or spin-based devices. We …
determine the functionality of highly-scaled transistors or spin-based devices. We …
Noninvasive spatial metrology of single-atom devices.
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck… - Nano Letters, 2013 - europepmc.org
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly scaled transistors or spin-based devices. We …
determine the functionality of highly scaled transistors or spin-based devices. We …
[PDF][PDF] Noninvasive Spatial Metrology of Single-Atom Devices
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck… - docs.lib.purdue.edu
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly scaled transistors or spin-based devices. We …
determine the functionality of highly scaled transistors or spin-based devices. We …
[引用][C] Noninvasive Spatial Metrology of Single-Atom Devices
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck… - Nano Letters, 2013 - cir.nii.ac.jp
Noninvasive Spatial Metrology of Single-Atom Devices | CiNii Research CiNii 国立情報学
研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学 …
研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学 …
Noninvasive spatial metrology of single-atom devices
FA Mohiyaddin, R Rahman, R Kalra… - Nano …, 2013 - pubmed.ncbi.nlm.nih.gov
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly scaled transistors or spin-based devices. We …
determine the functionality of highly scaled transistors or spin-based devices. We …
[引用][C] Noninvasive spatial metrology of single-atom devices
FA Mohiyaddin, R Rahman, R Kalra… - Nano …, 2013 - espace.library.uq.edu.au
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly scaled transistors or spin-based devices. We …
determine the functionality of highly scaled transistors or spin-based devices. We …
[PDF][PDF] Noninvasive Spatial Metrology of Single-Atom Devices
FA Mohiyaddin, R Rahman, R Kalra, G Klimeck… - docs.lib.purdue.edu
The exact location of a single dopant atom in a nanostructure can influence or fully
determine the functionality of highly scaled transistors or spin-based devices. We …
determine the functionality of highly scaled transistors or spin-based devices. We …