Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P Wolfram, E Steimetz, W Ebert, B Henninger… - Journal of Crystal …, 2003 - Elsevier
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …
被引用次数：16 相关文章

Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P Wolfram, E Steimetz, W Ebert, B Henninger, JT Zettler - 2003 - publica.fraunhofer.de
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …

[引用][C] Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P WOLFRAM, E STEIMETZ, W EBERT… - Journal of crystal …, 2003 - pascal-francis.inist.fr
Growth of InGaAsP/InP-laser structures monitored by using RAS techniques CNRS Inist
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search Advanced …

Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P Wolfram, E Steimetz, W Ebert, B Henninger… - Journal of Crystal …, 2003 - infona.pl
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …

Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P Wolfram, E Steimetz, W Ebert… - Journal of Crystal …, 2003 - ui.adsabs.harvard.edu
Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the
MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured …

[引用][C] Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

P WOLFRAM, E STEIMETZ, W EBERT… - Journal of crystal …, 2003 - Elsevier