Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy

GA Antypas, J Edgecumbe - Journal of Crystal Growth, 1976 - Elsevier
InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …
被引用次数：43 相关文章

[引用][C] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY.

GA ANTYPAS, J EDGECUMBE - 1976 - pascal-francis.inist.fr
DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP
LAYERS BY LIQUID-PHASE EPITAXY. CNRS Inist Pascal-Francis CNRS Pascal and …

[引用][C] Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy

GA Antypas, J Edgecumbe - Journal of Crystal Growth, 1976 - cir.nii.ac.jp
Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase
epitaxy | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …

Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy

GA Antypas, J Edgecumbe - Journal of Crystal Growth, 1976 - ui.adsabs.harvard.edu
InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …